d/ 20a t s 12 - 220 1200 v s i/ a t s? 5iode dec 2018 r ev 1.0 www.genesics emi.com/schottky_ mps /gc 20mps 12 s ilicon c arbide s chottky diode f eatures ? high avalanche (uis ) c apability ? e nhanced s urge c urrent c apability ? s uperior f igure of merit q c /i f ? low t hermal r esistance ? 175 c maximum operating t emperature ? t emperature independent s witching behavior ? positive t emperature c oefficient of v f ? e xtremely f ast s witching s peeds advantages ? low s tandby power losses ? improved c ircuit e fficiency (lower overall c ost) ? low s witching losses ? e ase of paralleling without t hermal r unaway ? s maller heat s ink r equirements ? low r everse r ecovery c urrent ? low device c apacitance ? low r everse leakage c urrent abs olute maximum r atings (at t parameter r epetitive peak r everse v oltage c ontinuous f orward c urrent non-r epetitive peak f orward s urge c urrent, half s ine wave r epetitive peak f orward s urge c urrent, half s ine wave non-r epetitive peak f orward s urge c urrent i 2 t v alue non-r epetitive avalanche e nergy diode r uggedness power dissipation operating and s torage temperature www.genesics emi.com/schottky_ mps /gc 20mps 12 - 220.pdf s chottky diode pac kage 175 c maximum operating t emperature t emperature independent s witching behavior f to-220-2 applic ations overall c ost) of paralleling without t hermal r unaway ? boost diode in power f actor c orrection (pf c ) ? s witched mode power s upply (s mp s ) ? uninterruptible power s upply (ups ) ? motor drives ? f reewheeling / anti- parallel diode in inverters ? s olar inverters ? e lectric vehicles (e v ) & c harging ? induction heating & w elding (at t c = 25 c unless otherwise s tated) s ymbol c onditions values v r r m 1200 i f t c = 25 c , d = 1 94 t c = 135 c , d = 1 46 t c = 165 c , d = 1 20 i f ,s m t c = 25 c , t p = 10 ms 120 t c = 150 c , t p = 10 ms 96 i f ,r m t c = 25 c , t p = 10 ms 82 t c = 150 c , t p = 10 ms 55 i f ,max t c = 25 c , t p = 10 s 1100 i 2 dt t c = 25 c , t p = 10 ms 72 e as l = 1 mh, i as = 20 a 220 dv /dt v r = 0 ~ 960 v 100 p tot t c = 25 c 597 t j , t stg - 55 to 175 v r r m i f (tc = 135 c ) q c a k c ase page 1 of 7 boost diode in power f actor c orrection (pf c ) s witched mode power s upply (s mp s ) uninterruptible power s upply (ups ) parallel diode in inverters e lectric vehicles (e v ) & c harging s tations values unit 1200 v a 120 a a 1100 a a 2 s 220 mj 100 v/ns 597 w 55 to 175 c = 1200 v c ) = 46 a = 66 nc
d/ 20a t s 12 - 220 1200 v s i/ a t s? 5iode dec 2018 r ev 1.0 www.genesics emi.com/schottky_ mps /gc 20mps 12 e lectrical c harac teristics parameter diode f orward voltage r everse c urrent total c apacitive c harge s witching time total c apacitance thermal / mec hanical c harac teris tics thermal r esistance, j unction - c ase weight mounting torque www.genesics emi.com/schottky_ mps /gc 20mps 12 - 220.pdf s ymbol c onditions values min. t yp . v f i f = 20.0 a, t j = 25 c 1.5 i f = 20.0 a, t j = 175 c 2 i r v r = 1200 v, t j = 25 c 1.8 v r = 1200 v, t j = 175 c 5.4 q c i f i f ,max di f /dt = 200 a/s t j = 175 c v r = 400 v 54 v r = 800 v 79 t s v r = 400 v < 10 v r = 800 v c v r = 1 v, f = 1 mhz, t j = 25 c 12 98 v r = 800 v, f = 1 mhz, t j = 25 c 83 c harac teris tics r thj c 0.2 2 w t 2 t m 0.8 page 2 of 7 values unit . max. 1.8 v 2.4 18 a 64.8 nc 10 ns 98 pf 2 c /w g nm
d/ 20a t s 12 - 220 1200 v s i/ a t s? 5iode dec 2018 r ev 1.0 www.genesics emi.com/schottky_ mps /gc 20mps 12 i f = f(v f ,t j ); t p = 10 s f ig ure 1: t ypical f orward c haracteristics i r = f(v r ,t j ) f ig ure 3: t ypical r evers e c haracteristics www.genesics emi.com/schottky_ mps /gc 20mps 12 - 220.pdf i f = f(v f ,t j ); t p = 1 f ig ure 1: t ypical f orward c haracteristics f ig ure 2: t ypical hig h c urrent f orward c haracteris tics p tot = f(t c ) f ig ure 3: t ypical r evers e c haracteristics f ig ure 4: power derating c urve page 3 of 7 = 1 0 s f ig ure 2: t ypical hig h c urrent f orward c haracteris tics power derating c urve
d/ 20a t s 12 - 220 1200 v s i/ a t s? 5iode dec 2018 r ev 1.0 www.genesics emi.com/schottky_ mps /gc 20mps 12 i f = f(t c ); d = t p /t , t p = 10 s f ig ure 5: c urrent derating c urves(t q c = f(v r ); t j = 25 c ; f = 1 f ig ure 7: t ypical c apacitive c harge vs voltag e c haracteris tics www.genesics emi.com/schottky_ mps /gc 20mps 12 - 220.pdf = 10 s c = f(v r ); t j = 25 c ; f = 1 f ig ure 5: c urrent derating c urves(t j = 206 c ) f ig ure 6: t ypical j unction c apacitance vs r everse voltag e c haracteris tics mhz e c = f(v r ); t j = 25 c ; f = 1 7: t ypical c apacitive c harge vs r evers e voltag e c haracteris tics f ig ure 8: t ypical c apacitive e nerg y vs voltag e c haracteris tics page 4 of 7 ; f = 1 mhz f ig ure 6: t ypical j unction c apacitance vs r everse voltag e c haracteris tics = 25 c ; f = 1 mhz 8: t ypical c apacitive e nerg y vs r evers e voltag e c haracteris tics
d/ 20a t s 12 - 220 1200 v s i/ a t s? 5iode dec 2018 r ev 1.0 www.genesics emi.com/schottky_ mps /gc 20mps 12 f ig ure 9: t ransient t hermal impedance i f = f(v f , t j ) f ig ure 10 : f orward c urve model www.genesics emi.com/schottky_ mps /gc 20mps 12 - 220.pdf z th,jc = f(t p ,d); d = t p /t f ig ure 9: t ransient t hermal impedance i f = (v f C v bi )/r dif f b uilt-in voltag e (v v bi (t j ) = m*t j + n (v) m = -1.64e- 03, n = 1.01 differential r es istance (r r dif f (t j ) = a*t j 2 + b*t a = 6.30e-07, b = 1.05e- 04, c = 0.0223 : f orward c urve model page 5 of 7 dif f (a) voltag e (v b i ): n (v) 03, n = 1.01 differential r es istance (r dif f ): + b*t j + c (? ); 04, c = 0.0223
d/ 20a t s 12 - 220 1200 v s i/ a t s? 5iode dec 2018 r ev 1.0 www.genesics emi.com/schottky_ mps /gc 20mps 12 pac kage dimens ions t o - 220 - 2l r ecommended s older pad l ayout note 1. c ontr olle d dime ns ion is inc h. dime ns ion in br ac k e t is millime te r . 2. dime ns ions do not inc lude e nd f las h, mold f las h, mate r ial p r ot r us ions www.genesics emi.com/schottky_ mps /gc 20mps 12 - 220.pdf p ac kage o utline 1. c ontr olle d dime ns ion is inc h. dime ns ion in br ac k e t is millime te r . inc lude e nd f las h, mold f las h, mate r ial p r ot r us ions page 6 of 7
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